5.0-20.0 GHz GaAs MMIC Low Noise Amplifier

General Description Mimix Broadband’s single stage 5.0-20.0 GHz GaAs MMIC low noise amplifier has a small signal gain of 13.0 dB with a noise figure of 2.2 dB across the band. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography

5.0-20.0 GHz GaAs MMIC Low Noise Amplifier

5.0-20.0 GHz GaAs MMIC Low Noise Amplifier

General Description Mimix Broadband’s single stage 5.0-20.0 GHz GaAs MMIC low noise amplifier has a small signal gain of 13.0 dB with a noise figure of 2.2 dB across the band. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithograph

5.0-20.0 GHz GaAs MMIC Low Noise Amplifier

General Description\nMimix Broadband’s single stage 5.0-20.0 GHz GaAs MMIC low noise amplifier has a small signal gain of 13.0 dB with a noise figure of 2.2 dB across the band. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ♦ Wideband Low Noise Amplifier\n♦ 13.0 dB Small Signal Gain\n♦ 2.2 dB Noise Figure\n♦ 100% On-Wafer RF, DC and Noise Figure Testing\n♦ 100% Visual Inspection to MIL-STD-883 Method 2010 ;

5.0-20.0 GHz GaAs MMIC Low Noise Amplifier

General Description Mimix Broadband’s single stage 5.0-20.0 GHz GaAs MMIC low noise amplifier has a small signal gain of 13.0 dB with a noise figure of 2.2 dB across the band. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithograph

5.0-20.0 GHz GaAs MMIC Low Noise Amplifier

General Description Mimix Broadband’s single stage 5.0-20.0 GHz GaAs MMIC low noise amplifier has a small signal gain of 13.0 dB with a noise figure of 2.2 dB across the band. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithograph

5.0-20.0 GHz GaAs MMIC Low Noise Amplifier

General Description Mimix Broadband’s single stage 5.0-20.0 GHz GaAs MMIC low noise amplifier has a small signal gain of 13.0 dB with a noise figure of 2.2 dB across the band. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithograph

REFERENCE FREQUENCY 16.368 MHz, 2ND IF FREQUENCY 4.092 MHz RF/IF FREQUENCY DOWN-CONVERTER PLL FREQUENCY SYNTHESIZER IC FOR GPS RECEIVER

DESCRIPTION The µPB1005K is a silicon monolithic integrated circuit for GPS receiver. This IC is designed as double conversion RF block integrated RF/IF down-converter + PLL frequency synthesizer on 1 chip. The µPB1005K features 36-pin plastic QFN, fixed prescaler and supply voltage. The

REFERENCE FREQUENCY 16.368 MHz, 2ND IF FREQUENCY 4.092 MHz RF/IF FREQUENCY DOWN-CONVERTER PLL FREQUENCY SYNTHESIZER IC FOR GPS RECEIVER

DESCRIPTION The µPB1005GS is a silicon monolithic integrated circuit for GPS receiver. This IC is designed as double conversion RF block integrated RF/IF down-converter + PLL frequency synthesizer on 1 chip. The µPB1005GS features shrink package, fixed prescaler and supply voltage. The 30

REFERENCE FREQUENCY 16.368 MHz, 2ND IF FREQUENCY 4.092 MHz RF/IF FREQUENCY DOWN-CONVERTER PLL FREQUENCY SYNTHESIZER IC FOR GPS RECEIVER

DESCRIPTION The µPB1005K is a silicon monolithic integrated circuit for GPS receiver. This IC is designed as double conversion RF block integrated RF/IF down-converter + PLL frequency synthesizer on 1 chip. The µPB1005K features 36-pin plastic QFN, fixed prescaler and supply voltage. The

10-Bit P Compatible A/D Converter

文件：254.3 Kbytes Page：12 Pages

10-Bit P Compatible A/D Converter

文件：254.3 Kbytes Page：12 Pages