低消耗电流线路交换

XC8101系列是一款内置P沟道MOSFET，自带ON/OFF功能和输出电流保护功能的低消耗电流线路交换。它能够控制供电电路的时序，并带有CL放电电路，因此在使用多个电源的应用中，能最大限度地有效合理地分配电源，大大提高了电池的使用时间，延长使用寿命。\n\n 采用USP-4封装，并且不需要电容等外部元件，有助于实现电源电路的小型化，大大节省了空间。\n\n CE端输入低电压时，芯片处于节电模式，如果此时输出端接有电容，在节电模式下，内部开关导通，能实现电容高速放电，使VOUT端电压快速回归到VSS程度。\n\n 内置Foldback型过电流保护电路，能在输出端出现过电流和短路时提 ·导通阻抗：0.75Ω@VIN=2.9V(TYP.)1.15Ω@VIN=1.8V(TYP.)\n·输出电流：200mA(300mA限流TYP.)\n·输入电压范围：1.8V～6.0V\n·消耗电流：3.0μA@VIN=1.8V\n·待机电流：0.1μA\n·保护电路：定电流制限300mA(TYP.)短路保护 短路电流30mA(TYP.)\n·ON/OFF功能：高电平ON\n·功能：输出电容高速放电功能\n·工作温度范围：-40℃~+85℃;

High Side Line Switch with Low Supply Current

文件：596.31 Kbytes Page：32 Pages

High Side Load Switch with Low Supply Current

文件：705.77 Kbytes Page：37 Pages

High Side Load Switch

文件：705.77 Kbytes Page：37 Pages

High Side Load Switch with Low Supply Current

文件：705.77 Kbytes Page：37 Pages

High Side Line Switch with Low Supply Current

文件：596.31 Kbytes Page：32 Pages

High Side Line Switch with Low Supply Current

文件：596.31 Kbytes Page：32 Pages

High Side Load Switch with Low Supply Current

文件：705.77 Kbytes Page：37 Pages

High Side Line Switch with Low Supply Current

文件：596.31 Kbytes Page：32 Pages

High Side Line Switch with Low Supply Current

文件：596.31 Kbytes Page：32 Pages

High Side Load Switch with Low Supply Current

文件：705.77 Kbytes Page：37 Pages

High Side Load Switch with Low Supply Current

文件：705.77 Kbytes Page：37 Pages

封装/外壳：SC-74A，SOT-753 包装：卷带（TR） 描述：IC PWR SWITCH P-CHAN 1:1 SOT25 集成电路（IC） 配电开关，负载驱动器

High Side Line Switch with Low Supply Current

文件：596.31 Kbytes Page：32 Pages

High Side Line Switch with Low Supply Current

文件：596.31 Kbytes Page：32 Pages

High Side Load Switch with Low Supply Current

文件：705.77 Kbytes Page：37 Pages

封装/外壳：SC-82 包装：卷带（TR） 描述：IC PWR SWITCH P-CHAN 1:1 SSOT24 集成电路（IC） 配电开关，负载驱动器

6-Pin DIP Optoisolators for Power Supply Applications(No Base Connection)

6-Pin DIP Optoisolators for Power Supply Applications(No Base Connection) The MOC8101, MOC8102, MOC8103, MOC8104 and MOC8105 devices consist of a gallium arsenide LED optically coupled to a silicon phototransistor in a dual–in–line package. • Closely Matched Current Transfer Ratio (CTR) Minimize

150 MHz SILICON QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATIONS

DESCRIPTION The UPC8101GR is a Silicon Monolithic Integrated Circuit (MMIC) which is manufactured using NECs 20 GHz fT NESAT III process. The Quadrature Modulator was designed for digital mobile communications in general, and the CT2 band requirements in particular. Operating on DC bias voltages

1 GHz DIRECT QUADRATURE MODULATOR FOR DIGITAL MOBILE COMMUNICATION

DESCRIPTION The µPC8110GR is a sillicon monolithic integrated circuit designed as 1 GHz direct quadrature modulator for digital mobile communication systems. This modulator housed in a 20 pin plastic SSOP that easy to install and contributes to miniaturizing the system. The device has power save

400 MHz QUADRATURE MODULATOR FOR DIGITAL MOBILE COMMUNICATION

DESCRIPTION The µPC8105GR is a sillicon monolithic integrated circuit designed as quadrature modulator for digital mobile communication systems. This modulator housed in a 16 pin plastic SSOP that is easy to install and contributes to miniaturizing the system. The device has power save function

UP-CONVERTER WITH AGC FUNCTION QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS

DESCRIPTION The UPC8125GR is a Silicon MMIC manufactured with the NESAT IIITM silicon bipolar process. The IC consists of a 1.8 - 2.0 GHz upconverter with AGC function and a 220 - 270 MHz IQ modulator. The device operates over a wide 2.7 - 5.5 V supply voltage range and features a power save func