Artix-7 FPGAs Data Sheet: DC and AC Switching Characteristics

ntroduction Artix®-7 FPGAs are available in -3, -2, -1, -1LI, and -2L speed grades, with -3 having the highest performance. The Artix-7 FPGAs predominantly operate at a 1.0V core voltage. The -1LI and -2L devices are screened for lower maximum static power and can operate at lower core voltag

可编程器件

Artix®-7 器件在单个成本优化的 FPGA 中提供了最高性能功耗比结构、 收发器线速、DSP 处理能力以及 AMS 集成。包含 MicroBlaze™ 软处理器和 1,066Mb/s DDR3 技术支持，此系列为各类成本功耗敏感型应用提供最大价值，包括软件定义无线电、机器视觉照相以及低端无线回传。 可编程的系统集成\t\r\n·高达 215K 逻辑单元; AXI IP 和 模拟混合信号集成\r\n\r\n提升的系统性能\t\r\n·支持高达 16 路 6.6G 收发器、930 GMAC、13Mb BRAM、1.2Gb/s LVDS 和 DDR3-1066\r\n\r\nBOM 成本削减\t\r\n·小型焊线封装，可节省 5 美元的模拟组件费用\r\n\r\n总功耗削减\t\r\n·与 45nm 器件相比，静电降低 65% 功耗降低 50%\r\n\r\n加速设计生产力\t\r\n·具有可扩展的优化架构、综合全面的工具以及 IP 核;

封装/外壳：238-LFBGA，CSPBGA 包装：托盘 描述：IC FPGA 106 I/O 238CSBGA 集成电路（IC） FPGA（现场可编程门阵列）

封装/外壳：324-LFBGA，CSPBGA 包装：托盘 描述：IC FPGA 210 I/O 324CSBGA 集成电路（IC） FPGA（现场可编程门阵列）

Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 2.5 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) • Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=7A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.22Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 2.5 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) • Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

N-Channel MOSFET uses advanced trench technology

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