1200 V, 300 A All-Silicon Carbide High Performance, Switching Optimized, Half-Bridge Module

Technical Features • Industry Standard 62mm Footprint • Ultra Low Loss , High-Frequency Operation • Zero Reverse Recovery from Diodes • Zero Turn-off Tail Current from MOSFET • Normally-off, Fail-safe Device Operation • Copper Baseplate and Aluminum Nitride Insulator VDS 1200 V IDS 300 A

All-SiC Power Module

FEATURES ·VDS=1200V,RDS(on)= 5.3mΩ（max） ·Zero Reverse Recovery Current from Diode ·Zero Turn-Off Tail Current from MOSFET ·High-Frequency Operation ·Ease of Paralleling ·Ultra Low Loss APPLICATIONS ·Solar and Wind Inverters ·UPS and SMPS ·Motor Drives

1.2kV, 5.0 m廓 All-Silicon Carbide Half-Bridge Module

文件：849.47 Kbytes Page：8 Pages

1.2kV, 4.2 mohm All-Silicon Carbide THB-80 Half-Bridge Module

文件：1.35746 Mbytes Page：9 Pages