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X28价格
参考价格:¥0.8211
型号:X28974890000 品牌:VCC 备注:这里有X28多少钱,2024年最近7天走势,今日出价,今日竞价,X28批发/采购报价,X28行情走势销售排行榜,X28报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
ELECTRICALLY ERASBLE PROM ELECTRICALLYERASBLEPROM | Xicor XICOR | |||
ELECTRICALLY ERASBLE PROM ELECTRICALLYERASBLEPROM | Xicor XICOR | |||
5 Volt, Byte Alterable E2PROM DESCRIPTION TheXicorX2804Cisa512x8E2PROM,fabricatedwithanadvanced,highperformanceN-channelfloatinggateMOStechnology.LikeallXicorProgrammablenonvolatilememoriesitisa5Vonlydevice.TheX2804CfeaturestheJEDECapprovedpinoutforbyte-widememories,compatiblewithin | Xicor XICOR | |||
5 Volt, Byte Alterable E2PROM DESCRIPTION TheXicorX2804Cisa512x8E2PROM,fabricatedwithanadvanced,highperformanceN-channelfloatinggateMOStechnology.LikeallXicorProgrammablenonvolatilememoriesitisa5Vonlydevice.TheX2804CfeaturestheJEDECapprovedpinoutforbyte-widememories,compatiblewithin | Xicor XICOR | |||
5 Volt, Byte Alterable E2PROM DESCRIPTION TheXicorX2804Cisa512x8E2PROM,fabricatedwithanadvanced,highperformanceN-channelfloatinggateMOStechnology.LikeallXicorProgrammablenonvolatilememoriesitisa5Vonlydevice.TheX2804CfeaturestheJEDECapprovedpinoutforbyte-widememories,compatiblewithin | Xicor XICOR | |||
5 Volt, Byte Alterable E2PROM DESCRIPTION TheXicorX2804Cisa512x8E2PROM,fabricatedwithanadvanced,highperformanceN-channelfloatinggateMOStechnology.LikeallXicorProgrammablenonvolatilememoriesitisa5Vonlydevice.TheX2804CfeaturestheJEDECapprovedpinoutforbyte-widememories,compatiblewithin | Xicor XICOR | |||
5 Volt, Byte Alterable E2PROM DESCRIPTION TheXicorX2804Cisa512x8E2PROM,fabricatedwithanadvanced,highperformanceN-channelfloatinggateMOStechnology.LikeallXicorProgrammablenonvolatilememoriesitisa5Vonlydevice.TheX2804CfeaturestheJEDECapprovedpinoutforbyte-widememories,compatiblewithin | Xicor XICOR | |||
5 Volt, Byte Alterable E2PROM DESCRIPTION TheXicorX2804Cisa512x8E2PROM,fabricatedwithanadvanced,highperformanceN-channelfloatinggateMOStechnology.LikeallXicorProgrammablenonvolatilememoriesitisa5Vonlydevice.TheX2804CfeaturestheJEDECapprovedpinoutforbyte-widememories,compatiblewithin | Xicor XICOR | |||
5 Volt, Byte Alterable E2PROM DESCRIPTION TheXicorX2804Cisa512x8E2PROM,fabricatedwithanadvanced,highperformanceN-channelfloatinggateMOStechnology.LikeallXicorProgrammablenonvolatilememoriesitisa5Vonlydevice.TheX2804CfeaturestheJEDECapprovedpinoutforbyte-widememories,compatiblewithin | Xicor XICOR | |||
5 Volt, Byte Alterable E2PROM DESCRIPTION TheXicorX2804Cisa512x8E2PROM,fabricatedwithanadvanced,highperformanceN-channelfloatinggateMOStechnology.LikeallXicorProgrammablenonvolatilememoriesitisa5Vonlydevice.TheX2804CfeaturestheJEDECapprovedpinoutforbyte-widememories,compatiblewithin | Xicor XICOR | |||
5 Volt, Byte Alterable E2PROM DESCRIPTION TheXicorX2804Cisa512x8E2PROM,fabricatedwithanadvanced,highperformanceN-channelfloatinggateMOStechnology.LikeallXicorProgrammablenonvolatilememoriesitisa5Vonlydevice.TheX2804CfeaturestheJEDECapprovedpinoutforbyte-widememories,compatiblewithin | Xicor XICOR | |||
5 Volt, Byte Alterable E2PROM DESCRIPTION TheXicorX2816Cisa2Kx8E2PROM,fabricatedwithanadvanced,highperformanceN-channelfloatinggateMOStechnology.LikeallXicorProgrammablenonvolatilememoriesitisa5Vonlydevice.TheX2816CfeaturestheJEDECapprovedpinoutforbyte-widememories,compatiblewithind | Xicor XICOR | |||
5 Volt, Byte Alterable E2PROM DESCRIPTION TheXicorX2816Cisa2Kx8E2PROM,fabricatedwithanadvanced,highperformanceN-channelfloatinggateMOStechnology.LikeallXicorProgrammablenonvolatilememoriesitisa5Vonlydevice.TheX2816CfeaturestheJEDECapprovedpinoutforbyte-widememories,compatiblewithind | Xicor XICOR | |||
5 Volt, Byte Alterable E2PROM DESCRIPTION TheXicorX2816Cisa2Kx8E2PROM,fabricatedwithanadvanced,highperformanceN-channelfloatinggateMOStechnology.LikeallXicorProgrammablenonvolatilememoriesitisa5Vonlydevice.TheX2816CfeaturestheJEDECapprovedpinoutforbyte-widememories,compatiblewithind | Xicor XICOR | |||
5 Volt, Byte Alterable E2PROM DESCRIPTION TheXicorX2816Cisa2Kx8E2PROM,fabricatedwithanadvanced,highperformanceN-channelfloatinggateMOStechnology.LikeallXicorProgrammablenonvolatilememoriesitisa5Vonlydevice.TheX2816CfeaturestheJEDECapprovedpinoutforbyte-widememories,compatiblewithind | Xicor XICOR | |||
5 Volt, Byte Alterable E2PROM DESCRIPTION TheXicorX2816Cisa2Kx8E2PROM,fabricatedwithanadvanced,highperformanceN-channelfloatinggateMOStechnology.LikeallXicorProgrammablenonvolatilememoriesitisa5Vonlydevice.TheX2816CfeaturestheJEDECapprovedpinoutforbyte-widememories,compatiblewithind | Xicor XICOR | |||
5 Volt, Byte Alterable E2PROM DESCRIPTION TheXicorX2816Cisa2Kx8E2PROM,fabricatedwithanadvanced,highperformanceN-channelfloatinggateMOStechnology.LikeallXicorProgrammablenonvolatilememoriesitisa5Vonlydevice.TheX2816CfeaturestheJEDECapprovedpinoutforbyte-widememories,compatiblewithind | Xicor XICOR | |||
5 Volt, Byte Alterable E2PROM DESCRIPTION TheXicorX2816Cisa2Kx8E2PROM,fabricatedwithanadvanced,highperformanceN-channelfloatinggateMOStechnology.LikeallXicorProgrammablenonvolatilememoriesitisa5Vonlydevice.TheX2816CfeaturestheJEDECapprovedpinoutforbyte-widememories,compatiblewithind | Xicor XICOR | |||
5 Volt, Byte Alterable E2PROM DESCRIPTION TheXicorX2816Cisa2Kx8E2PROM,fabricatedwithanadvanced,highperformanceN-channelfloatinggateMOStechnology.LikeallXicorProgrammablenonvolatilememoriesitisa5Vonlydevice.TheX2816CfeaturestheJEDECapprovedpinoutforbyte-widememories,compatiblewithind | Xicor XICOR | |||
5 Volt, Byte Alterable E2PROM DESCRIPTION TheXicorX2816Cisa2Kx8E2PROM,fabricatedwithanadvanced,highperformanceN-channelfloatinggateMOStechnology.LikeallXicorProgrammablenonvolatilememoriesitisa5Vonlydevice.TheX2816CfeaturestheJEDECapprovedpinoutforbyte-widememories,compatiblewithind | Xicor XICOR | |||
5 Volt, Byte Alterable E2PROM DESCRIPTION TheXicorX2816Cisa2Kx8E2PROM,fabricatedwithanadvanced,highperformanceN-channelfloatinggateMOStechnology.LikeallXicorProgrammablenonvolatilememoriesitisa5Vonlydevice.TheX2816CfeaturestheJEDECapprovedpinoutforbyte-widememories,compatiblewithind | Xicor XICOR | |||
5 Volt, Byte Alterable E2PROM DESCRIPTION TheXicorX2816Cisa2Kx8E2PROM,fabricatedwithanadvanced,highperformanceN-channelfloatinggateMOStechnology.LikeallXicorProgrammablenonvolatilememoriesitisa5Vonlydevice.TheX2816CfeaturestheJEDECapprovedpinoutforbyte-widememories,compatiblewithind | Xicor XICOR | |||
5 Volt, Byte Alterable E2PROM DESCRIPTION TheXicorX2816Cisa2Kx8E2PROM,fabricatedwithanadvanced,highperformanceN-channelfloatinggateMOStechnology.LikeallXicorProgrammablenonvolatilememoriesitisa5Vonlydevice.TheX2816CfeaturestheJEDECapprovedpinoutforbyte-widememories,compatiblewithind | Xicor XICOR | |||
5 Volt, Byte Alterable E2PROM DESCRIPTION TheXicorX2816Cisa2Kx8E2PROM,fabricatedwithanadvanced,highperformanceN-channelfloatinggateMOStechnology.LikeallXicorProgrammablenonvolatilememoriesitisa5Vonlydevice.TheX2816CfeaturestheJEDECapprovedpinoutforbyte-widememories,compatiblewithind | Xicor XICOR | |||
5 Volt, Byte Alterable E2PROM DESCRIPTION TheXicorX2816Cisa2Kx8E2PROM,fabricatedwithanadvanced,highperformanceN-channelfloatinggateMOStechnology.LikeallXicorProgrammablenonvolatilememoriesitisa5Vonlydevice.TheX2816CfeaturestheJEDECapprovedpinoutforbyte-widememories,compatiblewithind | Xicor XICOR | |||
5 Volt, Byte Alterable E2PROM DESCRIPTION TheXicorX2816Cisa2Kx8E2PROM,fabricatedwithanadvanced,highperformanceN-channelfloatinggateMOStechnology.LikeallXicorProgrammablenonvolatilememoriesitisa5Vonlydevice.TheX2816CfeaturestheJEDECapprovedpinoutforbyte-widememories,compatiblewithind | Xicor XICOR | |||
5 Volt, Byte Alterable E2PROM DESCRIPTION TheXicorX2816Cisa2Kx8E2PROM,fabricatedwithanadvanced,highperformanceN-channelfloatinggateMOStechnology.LikeallXicorProgrammablenonvolatilememoriesitisa5Vonlydevice.TheX2816CfeaturestheJEDECapprovedpinoutforbyte-widememories,compatiblewithind | Xicor XICOR | |||
5 Volt, Byte Alterable E2PROM DESCRIPTION TheXicorX2816Cisa2Kx8E2PROM,fabricatedwithanadvanced,highperformanceN-channelfloatinggateMOStechnology.LikeallXicorProgrammablenonvolatilememoriesitisa5Vonlydevice.TheX2816CfeaturestheJEDECapprovedpinoutforbyte-widememories,compatiblewithind | Xicor XICOR | |||
5 Volt, Byte Alterable E2PROM DESCRIPTION TheXicorX2816Cisa2Kx8E2PROM,fabricatedwithanadvanced,highperformanceN-channelfloatinggateMOStechnology.LikeallXicorProgrammablenonvolatilememoriesitisa5Vonlydevice.TheX2816CfeaturestheJEDECapprovedpinoutforbyte-widememories,compatiblewithind | Xicor XICOR | |||
5 Volt, Byte Alterable E2PROM DESCRIPTION TheXicorX2816Cisa2Kx8E2PROM,fabricatedwithanadvanced,highperformanceN-channelfloatinggateMOStechnology.LikeallXicorProgrammablenonvolatilememoriesitisa5Vonlydevice.TheX2816CfeaturestheJEDECapprovedpinoutforbyte-widememories,compatiblewithind | Xicor XICOR | |||
5 Volt, Byte Alterable E2PROM DESCRIPTION TheXicorX2816Cisa2Kx8E2PROM,fabricatedwithanadvanced,highperformanceN-channelfloatinggateMOStechnology.LikeallXicorProgrammablenonvolatilememoriesitisa5Vonlydevice.TheX2816CfeaturestheJEDECapprovedpinoutforbyte-widememories,compatiblewithind | Xicor XICOR | |||
5 Volt, Byte Alterable E2PROM DESCRIPTION TheXicorX2816Cisa2Kx8E2PROM,fabricatedwithanadvanced,highperformanceN-channelfloatinggateMOStechnology.LikeallXicorProgrammablenonvolatilememoriesitisa5Vonlydevice.TheX2816CfeaturestheJEDECapprovedpinoutforbyte-widememories,compatiblewithind | Xicor XICOR | |||
5 Volt, Byte Alterable E2PROM DESCRIPTION TheXicorX2816Cisa2Kx8E2PROM,fabricatedwithanadvanced,highperformanceN-channelfloatinggateMOStechnology.LikeallXicorProgrammablenonvolatilememoriesitisa5Vonlydevice.TheX2816CfeaturestheJEDECapprovedpinoutforbyte-widememories,compatiblewithind | Xicor XICOR | |||
5 Volt, Byte Alterable E2PROM DESCRIPTION TheXicorX2816Cisa2Kx8E2PROM,fabricatedwithanadvanced,highperformanceN-channelfloatinggateMOStechnology.LikeallXicorProgrammablenonvolatilememoriesitisa5Vonlydevice.TheX2816CfeaturestheJEDECapprovedpinoutforbyte-widememories,compatiblewithind | Xicor XICOR | |||
5 Volt, Byte Alterable E2PROM DESCRIPTION TheXicorX2816Cisa2Kx8E2PROM,fabricatedwithanadvanced,highperformanceN-channelfloatinggateMOStechnology.LikeallXicorProgrammablenonvolatilememoriesitisa5Vonlydevice.TheX2816CfeaturestheJEDECapprovedpinoutforbyte-widememories,compatiblewithind | Xicor XICOR | |||
5 Volt, Byte Alterable E2PROM DESCRIPTION TheXicorX2816Cisa2Kx8E2PROM,fabricatedwithanadvanced,highperformanceN-channelfloatinggateMOStechnology.LikeallXicorProgrammablenonvolatilememoriesitisa5Vonlydevice.TheX2816CfeaturestheJEDECapprovedpinoutforbyte-widememories,compatiblewithind | Xicor XICOR | |||
5 Volt, Byte Alterable E2PROM DESCRIPTION TheXicorX2816Cisa2Kx8E2PROM,fabricatedwithanadvanced,highperformanceN-channelfloatinggateMOStechnology.LikeallXicorProgrammablenonvolatilememoriesitisa5Vonlydevice.TheX2816CfeaturestheJEDECapprovedpinoutforbyte-widememories,compatiblewithind | Xicor XICOR | |||
5 Volt, Byte Alterable E2PROM DESCRIPTION TheXicorX2816Cisa2Kx8E2PROM,fabricatedwithanadvanced,highperformanceN-channelfloatinggateMOStechnology.LikeallXicorProgrammablenonvolatilememoriesitisa5Vonlydevice.TheX2816CfeaturestheJEDECapprovedpinoutforbyte-widememories,compatiblewithind | Xicor XICOR | |||
5 Volt, Byte Alterable E2PROM DESCRIPTION TheXicorX2816Cisa2Kx8E2PROM,fabricatedwithanadvanced,highperformanceN-channelfloatinggateMOStechnology.LikeallXicorProgrammablenonvolatilememoriesitisa5Vonlydevice.TheX2816CfeaturestheJEDECapprovedpinoutforbyte-widememories,compatiblewithind | Xicor XICOR | |||
5 Volt, Byte Alterable E2PROM DESCRIPTION TheXicorX2816Cisa2Kx8E2PROM,fabricatedwithanadvanced,highperformanceN-channelfloatinggateMOStechnology.LikeallXicorProgrammablenonvolatilememoriesitisa5Vonlydevice.TheX2816CfeaturestheJEDECapprovedpinoutforbyte-widememories,compatiblewithind | Xicor XICOR | |||
5 Volt, Byte Alterable E2PROM DESCRIPTION TheXicorX2816Cisa2Kx8E2PROM,fabricatedwithanadvanced,highperformanceN-channelfloatinggateMOStechnology.LikeallXicorProgrammablenonvolatilememoriesitisa5Vonlydevice.TheX2816CfeaturestheJEDECapprovedpinoutforbyte-widememories,compatiblewithind | Xicor XICOR | |||
5 Volt, Byte Alterable E2PROM DESCRIPTION TheXicorX2816Cisa2Kx8E2PROM,fabricatedwithanadvanced,highperformanceN-channelfloatinggateMOStechnology.LikeallXicorProgrammablenonvolatilememoriesitisa5Vonlydevice.TheX2816CfeaturestheJEDECapprovedpinoutforbyte-widememories,compatiblewithind | Xicor XICOR | |||
5 Volt, Byte Alterable E2PROM DESCRIPTION TheXicorX2816Cisa2Kx8E2PROM,fabricatedwithanadvanced,highperformanceN-channelfloatinggateMOStechnology.LikeallXicorProgrammablenonvolatilememoriesitisa5Vonlydevice.TheX2816CfeaturestheJEDECapprovedpinoutforbyte-widememories,compatiblewithind | Xicor XICOR | |||
5 Volt, Byte Alterable E2PROM DESCRIPTION TheXicorX2816Cisa2Kx8E2PROM,fabricatedwithanadvanced,highperformanceN-channelfloatinggateMOStechnology.LikeallXicorProgrammablenonvolatilememoriesitisa5Vonlydevice.TheX2816CfeaturestheJEDECapprovedpinoutforbyte-widememories,compatiblewithind | Xicor XICOR | |||
5V, Byte Alterable EEPROM Features •Accesstime:120ns •Simplebyteandpagewrite -Single5Vsupply -NoexternalhighvoltagesorVPPcontrol circuits -Self-timed •Noerasebeforewrite •Nocomplexprogrammingalgorithms •Noovereraseproblem •LowpowerCMOS -Active:50mA -Standby:500μA •Software | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
5 Volt, Byte Alterable EEPROM TheIntersilX28C010/X28HT010isa128Kx8EEPROM,fabricatedwithIntersilsproprietary,highperformance,floatinggateCMOStechnology.LikeallIntersilprogrammablenon-volatilememories,theX28C010/X28HT010isa5Vonlydevice.TheX28C010/X28HT010featurestheJEDECapprovedpinoutforb | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | |||
5 Volt, Byte Alterable EEPROM TheIntersilX28C010/X28HT010isa128Kx8EEPROM,fabricatedwithIntersilsproprietary,highperformance,floatinggateCMOStechnology.LikeallIntersilprogrammablenon-volatilememories,theX28C010/X28HT010isa5Vonlydevice.TheX28C010/X28HT010featurestheJEDECapprovedpinoutforb | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | |||
5 Volt, Byte Alterable EEPROM TheIntersilX28C010/X28HT010isa128Kx8EEPROM,fabricatedwithIntersilsproprietary,highperformance,floatinggateCMOStechnology.LikeallIntersilprogrammablenon-volatilememories,theX28C010/X28HT010isa5Vonlydevice.TheX28C010/X28HT010featurestheJEDECapprovedpinoutforb | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | |||
Protects data against system level inadvertent writes TheIntersilX28C010/X28HT010isa128Kx8EEPROM,fabricatedwithIntersilsproprietary,highperformance,floatinggateCMOStechnology.LikeallIntersilprogrammablenon-volatilememories,theX28C010/X28HT010isa5Vonlydevice.TheX28C010/X28HT010featurestheJEDECapprovedpinoutforb | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | |||
5V, Byte Alterable EEPROM Features •Accesstime:120ns •Simplebyteandpagewrite -Single5Vsupply -NoexternalhighvoltagesorVPPcontrol circuits -Self-timed •Noerasebeforewrite •Nocomplexprogrammingalgorithms •Noovereraseproblem •LowpowerCMOS -Active:50mA -Standby:500μA •Software | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
5 Volt, Byte Alterable EEPROM TheIntersilX28C010/X28HT010isa128Kx8EEPROM,fabricatedwithIntersilsproprietary,highperformance,floatinggateCMOStechnology.LikeallIntersilprogrammablenon-volatilememories,theX28C010/X28HT010isa5Vonlydevice.TheX28C010/X28HT010featurestheJEDECapprovedpinoutforb | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | |||
Protects data against system level inadvertent writes TheIntersilX28C010/X28HT010isa128Kx8EEPROM,fabricatedwithIntersilsproprietary,highperformance,floatinggateCMOStechnology.LikeallIntersilprogrammablenon-volatilememories,theX28C010/X28HT010isa5Vonlydevice.TheX28C010/X28HT010featurestheJEDECapprovedpinoutforb | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | |||
5V, Byte Alterable EEPROM Features •Accesstime:120ns •Simplebyteandpagewrite -Single5Vsupply -NoexternalhighvoltagesorVPPcontrol circuits -Self-timed •Noerasebeforewrite •Nocomplexprogrammingalgorithms •Noovereraseproblem •LowpowerCMOS -Active:50mA -Standby:500μA •Software | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
5 Volt, Byte Alterable EEPROM TheIntersilX28C010/X28HT010isa128Kx8EEPROM,fabricatedwithIntersilsproprietary,highperformance,floatinggateCMOStechnology.LikeallIntersilprogrammablenon-volatilememories,theX28C010/X28HT010isa5Vonlydevice.TheX28C010/X28HT010featurestheJEDECapprovedpinoutforb | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | |||
Protects data against system level inadvertent writes TheIntersilX28C010/X28HT010isa128Kx8EEPROM,fabricatedwithIntersilsproprietary,highperformance,floatinggateCMOStechnology.LikeallIntersilprogrammablenon-volatilememories,theX28C010/X28HT010isa5Vonlydevice.TheX28C010/X28HT010featurestheJEDECapprovedpinoutforb | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | |||
5V, Byte Alterable EEPROM Features •Accesstime:120ns •Simplebyteandpagewrite -Single5Vsupply -NoexternalhighvoltagesorVPPcontrol circuits -Self-timed •Noerasebeforewrite •Nocomplexprogrammingalgorithms •Noovereraseproblem •LowpowerCMOS -Active:50mA -Standby:500μA •Software | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
5 Volt, Byte Alterable EEPROM TheIntersilX28C010/X28HT010isa128Kx8EEPROM,fabricatedwithIntersilsproprietary,highperformance,floatinggateCMOStechnology.LikeallIntersilprogrammablenon-volatilememories,theX28C010/X28HT010isa5Vonlydevice.TheX28C010/X28HT010featurestheJEDECapprovedpinoutforb | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | |||
Protects data against system level inadvertent writes TheIntersilX28C010/X28HT010isa128Kx8EEPROM,fabricatedwithIntersilsproprietary,highperformance,floatinggateCMOStechnology.LikeallIntersilprogrammablenon-volatilememories,theX28C010/X28HT010isa5Vonlydevice.TheX28C010/X28HT010featurestheJEDECapprovedpinoutforb | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | |||
5V, Byte Alterable EEPROM Features •Accesstime:120ns •Simplebyteandpagewrite -Single5Vsupply -NoexternalhighvoltagesorVPPcontrol circuits -Self-timed •Noerasebeforewrite •Nocomplexprogrammingalgorithms •Noovereraseproblem •LowpowerCMOS -Active:50mA -Standby:500μA •Software | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
Protects data against system level inadvertent writes TheIntersilX28C010/X28HT010isa128Kx8EEPROM,fabricatedwithIntersilsproprietary,highperformance,floatinggateCMOStechnology.LikeallIntersilprogrammablenon-volatilememories,theX28C010/X28HT010isa5Vonlydevice.TheX28C010/X28HT010featurestheJEDECapprovedpinoutforb | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |
X28产品属性
- 类型
描述
- 型号
X28
- 制造商
Cooper Crouse-Hinds
- 制造商
Thomas & Betts
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
XICOR |
2020+ |
SOP32 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
XICOR |
1948+ |
SOP32 |
6852 |
只做原装正品现货!或订货假一赔十! |
|||
INTERSIL |
22+ |
CFOP |
12245 |
现货,原厂原装假一罚十! |
|||
XICOR |
2021+ |
SOP |
1600 |
自家库存,百分之百原装 |
|||
XILINX |
CSOP |
396379 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
XICOR |
2048+ |
SOP32 |
9852 |
只做原装正品现货!或订货假一赔十! |
|||
INTEA |
2023+ |
SOP |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
XICOR |
22+23+ |
SOP32 |
23896 |
绝对原装正品全新进口深圳现货 |
|||
XICOR |
23+ |
CSOP |
66800 |
现货正品专供军研究院 |
|||
XICOR |
23+ |
SOP-32 |
4500 |
全新原装、诚信经营、公司现货销售 |
X28规格书下载地址
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- X25C02P
- X25C02M
- X25C02
- X2576E
- X2576
- X2574-6
- X2573-6
- X2573-3
- X25650V
- X24-019WNC
- X24-019PKI-RA
- X24-019PKC-RA
- X24-019NSC
- X24-009WNI
- X24-009WNC
- X24-009PKI-RA
- X24-009PKC-UA
- X24-009PKC-RA
- X24-009NSC
- X2225CR-437W
- X22205CAAK
- X222.233.011180BASE
- X22012
- X22003HB
- X22003
- X22
- X21908
- X21904HB
X28数据表相关新闻
X3C17A1-03WS
进口代理
2022-7-19X25UFG 全套的高压二极管
最新原装进口,质量保证,宇集芯一对一服务您放心的品质,急速发货,VMI提供世界上最全套的高压二极管。轴向引线和SMD二极管的范围从2kV到20kV。所有的晶圆都是在我们的设备中掺杂、扩散和金属化的。我们提供广泛的测试,以确保我们的客户收到最/高质量的二极管。
2021-5-19X308032768KGB2SC
属性参数值 商品目录圆柱体晶振 频率公差±10ppm 负载电容值12.5pF 主频32.768KHz 晶振类型圆柱晶振
2020-9-17X25020SI-3.0,X25020ST4,X25057MI-1.8,X25057MI-2.7T1,X25057SI-2.7T4
X25020SI-3.0,X25020ST4,X25057MI-1.8,X25057MI-2.7T1,X25057SI-2.7T4
2020-3-29X24320P1.8,微处理器控制器,存储器,运放放大器,音频放大器,传感器,深圳兴中扬电子
X24320P1.8,微处理器控制器,存储器,运放放大器,音频放大器,传感器,深圳兴中扬电子
2019-12-2X3100V28-3或4芯锂离子电池保护和监控点器集成电路
X3100是一个使用电池的保护和监控IC包组成的4个系列的锂离子电池细胞。X3101是设计工作在3个电池的应用。这两款器件提供内部的过充电,过放电,和过电流保护电路,内部一个内部稳压器,EEPROM存储器,控制外部FET器件的内部驱动电路电池充电,放电,电池电压平衡。过充电,过放电,过电流阈值居住在内部EEPROM存储器寄存器通过使用一个3MHz的软件独立选择SPI串行接口。检测和时间延迟可以也可单独不同的使用外部电容器。使用了一个内部模拟多路复用器,X3100或X3101允许电池参数,如电池电压和电流(使用一个检测电阻器)被监视外部由一个单独的微控制器与A/D转换。此微控制器上的软件实
2012-12-29
DdatasheetPDF页码索引
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