Description

The WS1A2639 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC technology with RF matching

and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The WS1A2639 has been designed to

operate from 2496 MHz to 2690 MHz supply voltages of up to 50 V at average output power levels of 6 to 8 W with crest-factor reduced

and digitally pre-distorted LTE and 5G NR signals with instantaneous bandwidths of up to 200 MHz. The device is housed in a 6 mm X 6

mm land grid array (LGA) package.

Features

• GaN on SiC technology

• Frequency: 2496-2690 MHz

• Average Output Power : 6 to 8 W maximum

• PSAT = 48 dBm

• RF inputs matched to 50 Ω and DC matched

• Gate bias supply for main and peak sides available from either side

of device

• Integrated harmonic terminations

• Pb-free and RoHS compliant