Description

Cree’s CGHV40180P is an unmatched, gallium nitride (GaN) high

electron mobility transistor (HEMT). The CGHV40180P, operating

from a 50 volt rail, offers a general purpose, broadband solution

to a variety of RF and microwave applications. GaN HEMTs

offer high efficiency, high gain and wide bandwidth capabilities

making the CGHV40180P ideal for linear and compressed

amplifier circuits. The transistor is available in a 2-lead pill

package.

Features

• Up to 2.0 GHz Operation

• 24 dB Small Signal Gain at 900 MHz

• 20 dB Power Gain at 900 MHz

• 250 W Typical Output Power at 900 MHz

• 75 Efficiency at PSAT

Applications

• Military Communications

• Public Safety VHF-UHF applications

• Radar

• Medical

• Broadband Amplifiers