Description

Wolfspeed’s CGHV1J025D is a high voltage gallium nitride (GaN) High Electron

Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25μm gate

length fabrication process. This GaN-on-SiC product offers superior high frequency,

high efficiency features. It is ideal for a variety of applications operating from

10 GHz to 18 GHz at 40 V with a high breakdown voltage.

Large Signal Models Available for ADS and MWO

Features

• 17 dB Typ. Small Signal Gain at 10 GHz

• 60 Typ. PAE at 10 GHz

• 25 W Typical PSAT

• 40 V Operation

• Up to 18 GHz Operation

Applications

• Satellite Communications

• PTP Communications Links

• Marine Radar

• Pleasure Craft Radar

• Port Vessel Traffic Services

• Broadband Amplifiers

• High Efficiency Amplifiers