Technical Features

• High Power Density Footprint

• High Junction Temperature (175 °C) Operation

• Low Inductance (6.7 nH) Design

• Implements Conduction Optimized Third

Generation SiC MOSFET Technology

• Silicon Nitride Insulator and Copper Baseplate

VDS 1200 V

IDS 450 A

System Benefits

• Terminal layout allows for direct bus bar connection without bends or bushings enabling a simple,

low inductance design.

• Isolated integrated temperature sensing enables high-level temperature protection.

• Dedicated drain Kelvin pin enables direct voltage sensing for gate driver overcurrent protection.

Applications

• Motor & Traction Drives

• Vehicle Fast Chargers

• Uninterruptable Power Supplies

• Smart-Grid / Grid-Tied Distributed Generation