Technical Features

• High Power Density Footprint

• High Junction Temperature (175 °C) Operation

• Low-Inductance (6.7 nH) Design

• Implements Wolfspeed’s Third Generation SiC MOSFET

Technology

• Silicon Nitride Insulator and Copper Baseplate

• 1700 V Drain-Source Voltage

• Cross-pin Gate-Source Signal Pinout

Applications

• Energy

• Medical

• Motor & Motion Control

• Test and Production Equipment

• Transportation

• Traction Inverters

1700 V, 3.5 mΩ, Silicon Carbide, Half-Bridge Module

VDS 1700 V

I

DS 320 A

System Benefits

• Terminal layout allows for direct bus bar connection without bends

or bushings enabling a simple, low-inductance design.

• Isolated, integrated temperature sensing enables high-level temperature protection.

• Dedicated high-side Kelvin-drain pin enables direct voltage sensing

for gate driver overcurrent protection.

• 1700 VDS allows use with higher bus voltage (typically up to 1.4 kV).