Description

With the performance advantages of a Silicon Carbide (SiC)

Schottky Barrier diode, power electronics systems can expect

to meet higher efficiency standards than Si-based solutions,

while also reaching higher frequencies and power densities.

SiC diodes can be easily paralleled to meet various application

demands, without concern of thermal runaway. In combination

with the reduced cooling requirements and improved thermal

performance of SiC products, SiC diodes are able to provide

lower overall system costs in a variety of diverse applications.

Features

• Low Forward Voltage (VF

) Drop with Positive

Temperature Coefficient

• Zero Reverse Recovery Current / Forward

Recovery Voltage

• Temperature-Independent Switching Behavior

• Low Profile Package with Low Inductance

Applications

• Enterprise Power, Server, & Telecom

Power Supplies

• Switched Mode Power Supplies

• Industrial Power Supplies

• Boost Power Factor Correction

• Bootstrap Diode

• LLC Clamping