General Description

This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Features

■ RDS(on) (Max 0.015 Ω )@VGS=10V

■ Gate Charge (Typical 80nC)

■ Improved dv/dt Capability, High Ruggedness

■ 100 Avalanche Tested

■ Maximum Junction Temperature Range (175°C)