General Description

This Power MOSFET is produced using Winsemi’s advanced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply. electronic Lamp ballasts based on half bridge and UPS.

Features

■ 1A,600V, RDS(on)(Max 15.0Ω)@VGS=10V

■ Ultra-low Gate Charge(Typical 6.1nC)

■ Fast Switching Capability

■ 100Avalanche Tested

■ Maximum Junction Temperature Range(150℃)