General Description

This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has beenespecially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and ruggedavalanche characteristics. This Power MOSFET is well suited for synchronous DC-DC Converters and power Management inportable and battery operated products.

Features

■ 110A,50V,RDS(on)(Max 8mΩ)@VGS=10V

■ Ultra-lowGatecharge(Typical133nC)

■ FastSwitchingCapability

■ 100AvalancheTested

■ MaximumJunctionTemperatureRange(150℃)