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W25D40-LSNC-G中文资料

厂家型号

W25D40-LSNC-G

文件大小

1360.2Kbytes

页面数量

45

功能描述

1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI

数据手册

下载地址一下载地址二到原厂下载

生产厂商

WINBOND

W25D40-LSNC-G数据手册规格书PDF详情

GENERAL DESCRIPTION

The W25D10 (1M-bit), W25D20 (2M-bit), W25D40 (4M-bit) and W25D80 (8M-bit) Serial Flash

memories provide a storage solution for systems with limited space, pins and power. The 25X series

offers flexibility and performance well beyond ordinary Serial Flash devices. They are ideal for code

download applications as well as storing voice, text and data. The devices operate on a single 2.7V to

3.6V power supply with current consumption as low as 5mA active and 1µA for power-down. All

devices are offered in space-saving packages.

The W25D10/20/40/80 array is organized into 512/1024/2048/4096 programmable pages of 256-bytes

each. Up to 256 bytes can be programmed at a time using the Page Program instruction. Pages can

be erased in groups of 16 (sector erase), groups of 256 (block erase) or the entire chip (chip erase).

The W25D10/20/40/80 has 32/64/128/256 erasable sectors and 2/4/8/16 erasable blocks respectively.

The small 4KB sectors allow for greater flexibility in applications that require data and parameter

storage. (See figure 2.)

The W25D10/20/40/80 supports the standard Serial Peripheral Interface (SPI), and a high

performance dual output SPI using four pins: Serial Clock, Chip Select, Serial Data I/O and Serial

Data Out. SPI clock frequencies of up to 75MHz are supported allowing equivalent clock rates of

150MHz when using the Fast Read Dual Output instruction. These transfer rates are comparable to

those of 8 and 16-bit Parallel Flash memories.

A Hold pin, Write Protect pin and programmable write protect, with top or bottom array control

features, provide further control flexibility. Additionally, the device supports JEDEC standard

manufacturer and device identification.

FEATURES

• Family of Serial Flash Memories

– W25D10: 1M-bit / 128K-byte (131,072)

– W25D20: 2M-bit / 256K-byte (262,144)

– W25D40: 4M-bit / 512K-byte (524,288)

– W25D80: 8M-bit / 1M-byte (1,048,576)

– 256-bytes per programmable page

– Uniform 4K-byte Sectors / 64K-byte Blocks

• SPI with Single or Dual Outputs

– Clock, Chip Select, Data I/O, Data Out

– Optional Hold function for SPI flexibility

• Data Transfer up to 150M-bits / second

– Clock operation to 75MHz

– Fast Read Dual Output instruction

– Auto-increment Read capability

• Flexible Architecture with 4KB sectors

– Sector Erase (4K-bytes)

– Block Erase (64K-byte)

– Page program up to 256 bytes <2ms

– Up to 100,000 erase/write cycles

– 20-year retention

• Low Power Consumption, Wide

Temperature Range

– Single 2.7 to 3.6V supply

– 5mA active current, 1µA Power-down (typ)

– -40° to +85°C operating range

• Software and Hardware Write Protection

– Write-Protect all or portion of memory

– Enable/Disable protection with /WP pin

– Top or bottom array protection

• Space Efficient Packaging

– 8-pin SOIC 150-mil (W25D10/20/40)

– 8-pin SOIC 208-mil (W25D40/80)

– 8-pin PDIP 300-mil (W25D10/20/40/80)

– 8-pin WSON 6x5-mm (W25D10/20/40/80)

更新时间:2025-12-11 17:57:00
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