Product Description:

Using the Schottky Barrier principle with a Molybdenum barrier metal.

These state-of-are geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system.

Feature:

* Low Forward Voltage

* Low Switching Noise

* High Surge Capacity

* Guarantee Reverse Avalance

* Gurad-ing for Stress Protection

* Low Power Loss & High Efficiency

* 125 °C Operating Junction Temperature

* Low Stored Charge Majority Carrier Conduction

* Case: Epoxy, Molded