Functional Description

The WCMB2016R4X is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current.

Features

• Low voltage range:

— 1.65V−1.95V

• Ultra-low active power

— Typical Active Current: 0.5 mA @ f = 1 MHz

— Typical Active Current: 1.5 mA @ f = fmax

• Low standby power

• Easy memory expansion with CE and OE features

• Automatic power-down when deselected

• CMOS for optimum speed/power