丝印代码：30N03JDF；N-Channel Enhancement Mode Field Effect Transistor

General Description ● Trench Power LV MOSFET technology ● Excellent package for heat dissipation ● High density cell design for low RDS(ON) Applications ● High current load applications ● Load switching ● Hard switched and high frequency circuits ● Uninterruptible power supply

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

SIPMOS Power Transistor

Features • N channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated • 175°C operating temperature

SIPMOS Power Transistor

Features • N channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated • 175°C operating temperature

SIPMOS Power Transistor

文件：560.56 Kbytes Page：14 Pages

SIPMOS Power Transistor

文件：560.56 Kbytes Page：14 Pages