Dual N-Channel Enhancement Mode MOSFET

Features: * Super High Dense Cell Design For Low RDS(ON) RDS(ON)

Dual N-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

Customer Specification

Construction 1) Component 1 1 X 1 HOOKUP a) Conductor 22 (19/34) AWG 10 Nickel Plated Copper 0.030 b) Insulation 0.007 Wall, Nom. FLUOROPLASTIC 0.044+/- 0.002 (1) Tint Color(s) WHITE, BLACK, RED, GREEN, YELLOW, BLUE, BROWN ORANGE

Dual N-Channel 60 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 1.8 Ω • Low Threshold: 2 V (typ.) • Low Input Capacitance: 30 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC BENEFITS

Bases for ADN-Serie Cabinets

Product Description Bases for ADN-Serie Cabinets. The base is constructed out of four side and four corner profiles which correspond to the depth and width of the cabinet.

TS4909 low power stereo headphone amplifier

文件：122.46 Kbytes Page：5 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：60.08 Kbytes Page：4 Pages