Surface Mount N-Channel Enhancement Mode MOSFET

DRAIN CURRENT 12 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE Features: * Super high dense cell design for low RDS(ON) RDS(ON)

SOP-8 Plastic-Encapsulate MOSFETS

Description The 4884 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● High power and current handing capability ● Lead

40V Dual N-Channel MOSFET

General Description The AO4884 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This is an all purpose device that is suitable for use in a wide range of power conversion applications. Product Summary VDS 40V ID

Monolithic Crystal Filter

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N-Channel Enhancement Mode MOSFET

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Dual N-Channel MOSFET

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