900MHz Frequency Hopping Transceiver OEM Module

文件：58.35 Kbytes Page：3 Pages

OEM Module Developer?셲 Kits

文件：144.17 Kbytes Page：1 Pages

900 MHz FHSS Transceiver Module

文件：221.93 Kbytes Page：3 Pages

900 MHz FHSS Transceiver Module

文件：374.27 Kbytes Page：2 Pages

OEM Module Developer

文件：145.91 Kbytes Page：1 Pages

VHF variable capacitance diode

DESCRIPTION The BB910 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD68 (DO-34) package. FEATURES • Excellent linearity • Matched to 2.5 • Hermetically sealed leaded glass SOD68 (DO-34) package • C28: 2.5; ratio:

POWER TRANSISTORS(15A,90W)

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The BD909 and BD911 are silicon Epitaxial-Base NPN power transistors mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are BD910 and BD912 respectively. ■ STMicroelectronics PREFERRED SALESTYPES

UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor is encapsulated in a 6-lead SOT171 flange envelope with a ceramic cap. All leads are isolated from the flange. FEATURES • Internal input matching to achieve high power gain

Variable gain RF predriver amplifier

DESCRIPTION The SA910 is a variable gain predriver amplifier designed for handheld analog cellular telephones. When used with a UHF power transistor, it forms a cost-effective, low-profile, surface mount power amplifier solution (1.2W maximum PAE > 50). The SA910 integrates power detection and