GATE TURN THYRISTORS

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GaAs Varactor Diodes Abrupt Junction

Description Microsemi’s GaAs abrupt junction varactors are fabricated from epitaxial layers grown at Microsemi using Chemical Vapor Deposition. The layers are processed using proprietary techniques resulting in a high Q factor and very repeatable tuning curves. The diodes are available in a varie

10 Watts, 935-960 MHz Cellular Radio RF Power Transistor

Description The 20008 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 935 to 960 MHz. Rated at 10 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure exce

SCR Trigger and Control Transformers

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MULTI-MODE MAINS MODULE BURST FIRED OR PHASE ANGLE

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