Silicon N-Channel MOSFET

General Description This N-Channel enhancement mode power field effect transistors are produced using Winsemis proprietary, planar stripe ,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

Power MOSFET

DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) ≤ 1.2Ω @ VGS=10V, ID=4.5A * U

N-Channel Power MOSFET

DESCRIPTION They are designed for use in applications such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications. The Nell 9N90 is a three-terminal silicon device with current conduction capability of 9A, fast switchi

9A, 900V N-CHANNEL POWER MOSFET

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900V N-CHANNEL MOSFET

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9A900V N-CHANNEL MOSFET

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