位置:首页 > IC中文资料第7011页 > WBP13005D
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
WBP13005D | High Voltage Fast -Switching NPN Power Transistor 文件:403.12 Kbytes Page:5 Pages | WINSEMIShenzhen Wenxian Microelectronics Co., Ltd 稳先微电子深圳市稳先微电子有限公司 | ||
WBP13005D | High Voltage Fast -Switching NPN Power Transistor | WINSEMIShenzhen Wenxian Microelectronics Co., Ltd 稳先微电子深圳市稳先微电子有限公司 | ||
High Voltage Fast-SwitchingNPN Power Transistor 文件:420.66 Kbytes Page:4 Pages | WINSEMIShenzhen Wenxian Microelectronics Co., Ltd 稳先微电子深圳市稳先微电子有限公司 | |||
NPN SILICON POWER TRANSISTOR SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor Controls, | ONSEMI 安森美半导体 | |||
POWER TRANSISTORS(4A,300-400V,75W) SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS ... designed for use in high-voltage,high-speed,power switching in inductive circuit, they are particularly suited for 115 and 220V switchmode applications such as switching regulators,inverters. DC-DC conveter, Motor controls, Solenoiid / Relay dri | MOSPEC 统懋 | |||
4 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 75 WATTS 4 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 75 WATTS These devices are designedfor high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor | MOTOROLA 摩托罗拉 | |||
Silicon Diffused Power Transistor GENERAL DESCRIPTION The PHE13005 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. | PHILIPS 飞利浦 | |||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS DESCRIPTION The devices are is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. ■ MEDIUM VOLT | STMICROELECTRONICS 意法半导体 |
WBP13005D产品属性
- 类型
描述
- 型号
WBP13005D
- 制造商
WINSEMI
- 制造商全称
WINSEMI
- 功能描述
High Voltage Fast -Switching NPN Power Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
WanTcom |
24+ |
放大器 |
3600 |
专注军工级宇航级器件长期排单订货 |
|||
WINSEMI |
23+ |
TO220 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
24+ |
950 |
||||||
Wantcom |
14+ |
WP-6 |
200 |
Wantcom核心分销-军工器件供应商 |
|||
WANTCOM |
23+ |
N/A |
7560 |
原厂原装 |
|||
WINSEMI |
TO-220C |
22+ |
6000 |
十年配单,只做原装 |
|||
WanTom |
21+ |
标准封装 |
100 |
专营优势订货渠道! |
|||
原厂原装 |
2023+环保现货 |
TO-220 |
250000 |
专注军工、汽车、医疗、工业等方案配套一站式服务 |
WBP13005D规格书下载地址
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