Full Feature Peak Reducing EMI Solution

Overview The W183 product is one of a series of devices in the Cypress PREMIS family. The PREMIS family incorporates the latest advances in PLL spread spectrum frequency synthesizer techniques. By frequency modulating the output with a low frequency carrier, peak EMI is greatly reduced. Use of

Full Feature Peak Reducing EMI Solution

Full Feature Peak Reducing EMI Solution

Overview The W183 product is one of a series of devices in the Cypress PREMIS family. The PREMIS family incorporates the latest advances in PLL spread spectrum frequency synthesizer techniques. By frequency modulating the output with a low frequency carrier, peak EMI is greatly reduced. Use of

Full Feature Peak Reducing EMI Solution

Overview\nThe W183 product is one of a series of devices in the Cypress PREMIS family. The PREMIS family incorporates the latest advances in PLL spread spectrum frequency synthesizer techniques. By frequency modulating the output with a low frequency carrier, peak EMI is greatly reduced. Use of this • Cypress PREMIS™ family offering\n• Generates an EMI optimized clocking signal at the output\n• Selectable output frequency range\n• Single 1.25%, 3.75% down or center spread output\n• Integrated loop filter components\n• Operates with a 3.3 or 5V supply\n• Low power CMOS design\n• Availabl;

Amplifier Transistors(NPN)

Aplifier Transistors NPN Silicon

Silicon NPN Planar RF Transistor

Features ● Low power applications ● Low noise figure ● High transition frequency fT = 8 GHz Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA.

Silicon NPN Planar RF Transistor

Features ● Low power applications ● Low noise figure ● High transition frequency fT = 8 GHz Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA.

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes ithem ideal for large–signal, common source amplifier applications in 28 volt base station equipment. • Guaranteed Performance at 945 MHz, 28 Vol

Silicon Complementary Transistors General Purpose Amplifier, Switch

Description: The NTE182 (NPN) and NTE183 (PNP) are silicon transistors in a TO127 type case designed for use in general purpose amplifier and switching applications. Features: • DC Current Gain Specified to 10A • High Current Gain–Bandwidth Product: fT = 2MHz (Min) @ IC = 500mA