FEATURES

• High power fast recovery diode series

• 1.0 μs to 2.0 μs recovery time

• High voltage ratings up to 2200 V

• High current capability

• Optimized turn-on and turn-off characteristics

• Low forward recovery

• Fast and soft reverse recovery

• Press PUK encapsulation

• Case style conform to JEDEC® B-43

• Maximum junction temperature 125 °C

• Designed and qualified for industrial level

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

• Snubber diode for GTO

• High voltage freewheeling diode

• Fast recovery rectifier applications