FEATURES

• Ultrafast and ultrasoft recovery

• Very low IRRM and Qrr

• Specified at operating conditions

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 260 °C

• AEC-Q101 qualified

• Meets JESD 201 class 1 whisker test

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

DESCRIPTION

VS-HFA16TB120SHM3 is a state of the art ultrafast recovery

diode. Employing the latest in epitaxial construction and

advanced processing techniques it features a superb

combination of characteristics which result in performance

which is unsurpassed by any rectifier previously available.

With basic ratings of 1200 V and 16 A continuous current,

the VS-HFA16TB120SHM3 is especially well suited for use

as the companion diode for IGBTs and MOSFETs. In

addition to ultrafast recovery time, the HEXFRED® product

line features extremely low values of peak recovery current

(IRRM) and does not exhibit any tendency to “snap-off”

during the tb portion of recovery. The HEXFRED features

combine to offer designers a rectifier with lower noise and

significantly lower switching losses in both the diode and the

switching transistor. These HEXFRED advantages can help

to significantly reduce snubbing, component count and

heatsink sizes. The HEXFRED VS-HFA16TB120SHM3 is

ideally suited for applications in power supplies and power

conversion systems (such as inverters), motor drives, and

many other similar applications where high speed, high

efficiency is needed.