FEATURES

• Ultrafast and ultrasoft recovery

• Very low IRRM and Qrr

• AEC-Q101 qualified, meets JESD 201 class 1A

whisker test

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

DESCRIPTION

VS-HFA16PB120HN3 is a state of the art ultrafast recovery

diode. Employing the latest in epitaxial construction and

advanced processing techniques it features a superb

combination of characteristics which result in performance

which is unsurpassed by any rectifier previously available.

With basic ratings of 1200 V and 16 A continuous current,

the VS-HFA16PB120HN3 is especially well suited for use as

the companion diode for IGBTs and MOSFETs. In addition

to ultrafast recovery time, the HEXFRED® product line

features extremely low values of peak recovery current

IRRM) and does not exhibit any tendency to “snap-off”

during the tb portion of recovery. The HEXFRED features

combine to offer designers a rectifier with lower noise and

significantly lower switching losses in both the diode and the

switching transistor. These HEXFRED advantages can help

to significantly reduce snubbing, component count and

heatsink sizes. The HEXFRED VS-HFA16PB120HN3 is

ideally suited for applications in power supplies and power

conversion systems (such as inverters), motor drives, and

many other similar applications where high speed, high

efficiency is needed.