FEATURES

• Ultrafast and ultrasoft recovery

• Very low IRRM and Qrr

• Specified at operating conditions

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 260 °C

• AEC-Q101 qualified

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

DESCRIPTION

VS-HFA08TA60CSPbF is a state of the art center tap

ultrafast recovery diode. Employing the latest in epitaxial

construction and advanced processing techniques it

features a superb combination of characteristics which

result in performance which is unsurpassed by any rectifier

previously available. With basic ratings of 600 V and 4 A per

leg continuous current, the VS-HFA08TA60CSPbF is

especially well suited for use as the companion diode for

IGBTs and MOSFETs. In addition to ultrafast recovery time,

the HEXFRED® product line features extremely low values of

peak recovery current (IRRM) and does not exhibit any

tendency to “snap-off” during the tb portion of recovery. The

HEXFRED features combine to offer designers a rectifier

with lower noise and significantly lower switching losses in

both the diode and the switching transistor. These

HEXFRED advantages can help to significantly reduce

snubbing, component count and heatsink sizes. The

HEXFRED VS-HFA08TA60CSPbF is ideally suited for

applications in power supplies and power conversion

systems (such as inverters), motor drives, and many other

similar applications where high speed, high efficiency is

needed.