FEATURES

MOSFET

• Enhanced body diode dV/dt and dIF/dt capability

• Improved gate avalanche and dynamic dV/dt

ruggedness

• Fully characterized capacitance and avalanche SOA

• Fully isolated package

• Easy to use and parallel

• Low on-resistance

• Simple drive requirements

CHOPPER DIODE

• Low forward voltage drop

• Ultrafast, soft reverse recovery, with high operating

junction temperature (TJ max. = 175 °C)

• UL approved file E78996

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912