FEATURES

• Fully isolated package

• Easy to use and parallel

• Low on-resistance

• Dynamic dV/dt rating

• Fully avalanche rated

• Simple drive requirements

• Low gate charge device

• Low drain to case capacitance

• Low internal inductance

• UL approved file E78996

• Designed for industrial level

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

DESCRIPTION

Third generation power MOSFETs from Vishay

Semiconductors provide the designer with the best

combination of fast switching, ruggedized device design,

low on-resistance and cost-effectiveness.

The SOT-227 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 600 W to 1000 W. The low thermal

resistance of the SOT-227 contribute to its wide acceptance

throughout the industry.