FEATURES

• Trench IGBT technology

• HEXFRED clamping diode technology

• Rectifier bypass diode

• PressFit pins technology

• Exposed Al2O3 substrate with low thermal resistance

• Integrated thermistor

• 10 μs short circuit capability

• Square RBSOA

• Low internal inductances

• Low switching loss

• PressFit pins locking technology. Patent # US.263.820 B2

• UL approved file E78996

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

DESCRIPTION

VS-ETL015Y120H is an integrated solution for a double

interleaved boost converter. The EMIPAK-2B package is

easy to use thanks to the PressFit pins and the exposed

substrate provides improved thermal performance. The

optimized layout also helps to minimize stray parameters,

allowing for better EMI performance.