FEATURES

• E series power MOSFET with fast body diode

• SiC diode technology

• Exposed Al2O3 substrate with low thermal

resistance

• Low input capacitance

• Low switching and conduction losses

• Low figure-of-merit (FOM) Ron x Qg

• Ultra low gate charge Qg

• Low internal inductances

• Qualified using AQG324 guideline as reference

• PressFit pins locking technology

PATENT(S): www.vishay.com/patents

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

DESCRIPTION

The EMIPAK 1B package is easy to use thanks to the

PressFit pins. The exposed substrate provides improved

thermal performance.

The optimized layout also helps to minimize stray

parameters, allowing for better EMI performance.