FEATURES

• 175 °C high performance Schottky diode

• Very low forward voltage drop

• Extremely low reverse leakage

• Optimized VF vs. IR trade off for high efficiency

• Increased ruggedness for reverse avalanche

capability

• RBSOA available

• Negligible switching losses

• Submicron trench technology

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified according to JEDEC-JESD47

APPLICATIONS

• High efficiency SMPS

• High frequency switching

• Output rectification

• Reverse battery protection

• Freewheeling

• DC/DC systems

• Increased power density systems