DESCRIPTION

The VOS618A series has a GaAs infrared emitting diode

emitter, which is optically coupled to a silicon planar

phototransistor detector, and is incorporated in a 4-pin

50 mil lead pitch mini-flat package.

It features a high current transfer ratio at low input current,

low coupling capacitance, and high isolation voltage.

The coupling devices are designed for signal transmission

between two electrically separated circuits.

FEATURES

• High CTR with low input current

• Low profile package (half pitch)

• High collector emitter voltage, VCEO = 80 V

• Isolation test voltage = 3750 VRMS

• Low coupling capacitance

• High common mode transient immunity

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912