DESCRIPTION

The 110 °C rated VO617C feature a high current transfer

ratio, low coupling capacitance and high isolation voltage.

These couplers have a GaAs infrared diode emitter, which

is optically coupled to a silicon planar phototransistor

detector, and is incorporated in a plastic DIP-4 package.

The coupling devices are designed for signal transmission

between two electrically separated circuits.

FEATURES

• Copper lead-frame

• Operating temperature from - 55 °C to + 110 °C

• Isolation test voltage, 5300 VRMS

• High collector emitter voltage, VCEO = 80 V

• Low saturation voltage

• Fast switching times

• Low CTR degradation

• Low coupling capacitance

• End stackable, 0.100 (2.54 mm) spacing

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912