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VF20202G中文资料

厂家型号

VF20202G

文件大小

164.81Kbytes

页面数量

6

功能描述

Dual High Voltage Trench MOS Barrier Schottky Rectifier

数据手册

原厂下载下载地址一下载地址二到原厂下载

简称

VISHAY威世科技

生产厂商

Vishay Siliconix

中文名称

官网

VF20202G数据手册规格书PDF详情

FEATURES

• Trench MOS Schottky technology Gen 2

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

• Solder bath temperature 275 °C maximum, 10 s,

per JESD 22-B106 (for TO-220AB, ITO-220AB, and

TO-262AA package)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in high frequency DC/DC converters, switching

power supplies, freewheeling diodes, OR-ing diode, and

reverse battery protection.

MECHANICAL DATA

Case: TO-220AB, ITO-220AB, TO-263AB, and TO-262AA

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free, RoHS-compliant, and

commercial grade

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs max.

更新时间:2021-9-14 10:50:00
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