位置:V6WM100C-M3_V01 > V6WM100C-M3_V01详情

V6WM100C-M3_V01中文资料

厂家型号

V6WM100C-M3_V01

文件大小

90.06Kbytes

页面数量

5

功能描述

Dual Trench MOS Barrier Schottky Rectifier

数据手册

下载地址一下载地址二到原厂下载

简称

VISHAY威世

生产厂商

Vishay Siliconix

中文名称

威世科技公司官网

V6WM100C-M3_V01数据手册规格书PDF详情

FEATURES

• Trench MOS Schottky technology

• Ideal for automated placement

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in high frequency DC/DC converters, switching

power supplies, freewheeling diodes, OR-ing diode, and

reverse battery protection.

MECHANICAL DATA

Case: TO-252 (D-PAK)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free, RoHS-compliant, and

commercial grade

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked

更新时间:2025-12-5 15:53:00
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