DESCRIPTION

TSTA7100 is an infrared, 875 nm emitting diode in GaAlAs technology in a hermetically sealed TO-18 package with lens.

FEATURES

• Package type: leaded

• Package form: TO-18

• Dimensions (in mm): ∅ 4.7

• Peak wavelength: λp = 875 nm

• High reliability

• High radiant power

• High radiant intensity

• Angle of half intensity: ϕ = ± 5°

• Low forward voltage

• Suitable for high pulse current operation

• Good spectral matching with Si photodetectors

• Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC

APPLICATIONS

• Radiation source near infrared range