DESCRIPTION

TSSF4500 is an infrared, 890 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.

FEATURES

• Package type: leaded

• Package form: side view

• Dimensions (L x W x H in mm): 4.5 x 4 x 4.8

• Peak wavelength: λp = 890 nm

• High reliability

• High radiant power

• High radiant intensity

• Angle of half intensity: ϕ = ± 22°

• Low forward voltage

• Suitable for high pulse current operation

• High modulation bandwidth: fc = 12 MHz

• Good spectral matching with Si photodetectors

• Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC

APPLICATIONS

• Infrared high speed remote control and free air data transmission systems with high modulation frequencies or high data transmission rate requirements

• TSSF4500 is ideal for the design of transmission systems according to IrDA requirements and for carrier frequency based systems (e.g. ASK/FSK - coded, 450 kHz or 1.3 MHz)