DESCRIPTION

TSHG5510 is an infrared, 830 nm emitting diode in GaAlAs

double hetero (DH) technology with high radiant power and

high speed, molded in a clear, untinted plastic package.

FEATURES

• Package type: leaded

• Package form: T-1¾

• Dimensions (in mm): Ø 5

• Leads with stand-off

• Peak wavelength: λp = 830 nm

• High reliability

• High radiant power

• High radiant intensity

• Angle of half intensity: ϕ = ± 38°

• Low forward voltage

• Suitable for high pulse current operation

• High modulation bandwidth: fc = 24 MHz

• Good spectral matching to Si photodetectors

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC