DESCRIPTION

TSHF5211 is an infrared, 890 nm emitting diode in surface

emitter chip technology with high radiant power and high

speed, molded in a clear, untinted plastic package.

FEATURES

• Package type: leaded

• Package form: T-1¾

• Dimensions (in mm): Ø 5

• Leads with stand-off

• Peak wavelength: λp = 890 nm

• High reliability

• High radiant power

• High radiant intensity

• Angle of half intensity: ϕ = ± 10°

• Low forward voltage

• Good spectral matching to Si photodetectors

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912