DESCRIPTION

The TSHA620. series are infrared, 875 nm emitting diodes in

GaAlAs technology, molded in a clear, untinted plastic

package.

FEATURES

• Package type: leaded

• Package form: T-1¾

• Dimensions (in mm): Ø 5

• Peak wavelength: λp = 875 nm

• High reliability

• Angle of half intensity: ϕ = ± 12°

• Low forward voltage

• Suitable for high pulse current operation

• Good spectral matching with Si photodetectors

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

Note

** Please see document “Vishay Material Category Policy”:

www.vishay.com/doc?99902