DESCRIPTION

TSFF5210 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.

FEATURES

• Package type: leaded

• Package form: T-1 3/4

• Dimensions (in mm): Ø 5

• Leads with stand-off

• Peak wavelength: λp = 870 nm

• High reliability

• High radiant power

• High radiant intensity

• Angle of half intensity:  ϕ = ± 10°

• Low forward voltage

• Suitable for high pulse current operation

• High modulation bandwidth: fc = 24 MHz

• Good spectral matching with Si photodetectors

• Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC

APPLICATIONS

• Infrared video data transmission between camcorder and TV set

• Free air data transmission systems with high modulation frequencies or high data transmission rate requirements

• Smoke-automatic fire detectors