位置:TS9414VB_V01 > TS9414VB_V01详情

TS9414VB_V01中文资料

厂家型号

TS9414VB_V01

文件大小

87.2Kbytes

页面数量

4

功能描述

Specification of High Power IR Emitting Diode Chip

数据手册

下载地址一下载地址二到原厂下载

简称

VISHAY威世科技

生产厂商

Vishay Siliconix

中文名称

官网

TS9414VB_V01数据手册规格书PDF详情

DESCRIPTION

TS9414VB is a high power infrared, 940 nm surface emitting

diode in GaAlAs technology with high radiant power and

high speed. Polarity configuration is “n-up”.

GENERAL INFORMATION

The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and assumed conditions, and is

provided for illustration purpose only. Customers are encouraged to perform testing in actual proposed packaged and used

conditions. Vishay optoelectronics die products are tested using Vishay optoelectronics based quality assurance procedures

and are manufactured using Vishay optoelectronics established processes. Estimates such as those described and set forth in

this datasheet for semiconductor die will vary depending on a number of packaging, handling, use, and other factors. Therefore

sold die may not perform on an equivalent basis to standard package products.

FEATURES

• Package type: chip

• Package form: single chip

• Technology: surface emitter

• Dimensions chip (L x W x H in mm):

0.355 x 0.355 x 0.17

• Peak wavelength: λ = 940 nm

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

更新时间:2025-10-6 11:21:00
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