DESCRIPTION

TS8510VB is a high power infrared, 855 nm surface emitting

diode in GaAlAs technology with high radiant power and

high speed. Polarity configuration is “n-up”.

FEATURES

• Package type: chip

• Package form: single chip

• Technology: surface emitter

• Dimensions chip (L x W x H in mm):

0.260 x 0.260 x 0.17

• Peak wavelength:  = 855 nm

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912