DESCRIPTION

TS8510VB is a high power infrared, 855 nm surface emitting

diode in GaAlAs technology with high radiant power and

high speed. Polarity configuration is “n-up”.



GENERAL INFORMATION

The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and assumed conditions, and is

provided for illustration purpose only. Customers are encouraged to perform testing in actual proposed packaged and used

conditions. Vishay optoelectronics die products are tested using Vishay optoelectronics based quality assurance procedures

and are manufactured using Vishay optoelectronics established processes. Estimates such as those described and set forth in

this datasheet for semiconductor die will vary depending on a number of packaging, handling, use, and other factors. Therefore

sold die may not perform on an equivalent basis to standard package products.

FEATURES

• Package type: chip

• Package form: single chip

• Technology: surface emitter

• Dimensions chip (L x W x H in mm):

0.260 x 0.260 x 0.17

• Peak wavelength:  = 855 nm

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912