DESCRIPTION

The TCET4600 consists of a phototransistor optically

coupled to 2 gallium arsenide infrared-emitting diodes in

16 pin lead plastic dual inline package.

FEATURES

• Extra low coupling capacity - typical 0.2 pF

• High common mode rejection

• Low temperature coefficient of CTR

• Rated impulse voltage (transient overvoltage)

VIOTM = 10 kV peak

• Isolation test voltage (partial discharge test

voltage) Vpd = 1.6 kV peak

• Rated isolation voltage (RMS includes DC)

VIOWM = 600 VRMS

• Rated recurring peak voltage (repetitive) VIORM = 890 Vpeak

• Thickness though insulation ≥ 0.4 mm

• Creepage current resistance according to VDE 0303 /

IEC 60112 comparative tracking index: CTI ≥ 175

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912