DESCRIPTION

The TCET1600, TCET1600G consists of a phototransistor

optically coupled to 2 gallium arsenide infrared-emitting

diodes in a single (4 pin) package.

FEATURES

• Isolation materials according to UL94 V-O

• Pollution degree 2 (DIN/VDE 0110 /resp. IEC

60664)

• Climatic classification 55/100/21 (IEC 60068

part 1)

• Special construction: therefore, extra low

coupling capacity of typical 0.2 pF, high

common mode rejection

• Low temperature coefficient of CTR

• Rated impulse voltage (transient overvoltage)

VIOTM = 10 kV peak

• Isolation test voltage (partial discharge test voltage)

Vpd = 1.6 kV peak

• Rated isolation voltage (RMS includes DC)

VIOWM = 600 VRMS

• Rated recurring peak voltage (repetitive) VIORM = 890 Vpeak

• Thickness though insulation ≥ 0.75 mm

• Creepage current resistance according to VDE 0303/

IEC 60112 comparative tracking index: CTI ≥ 175

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC