FEATURES

• TrenchFET® Gen IV power MOSFET

• Very low RDS x Qg figure-of-merit (FOM)

• Leadership RDS(on) minimizes power loss from

conduction

• 100 Rg and UIS tested

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Battery management

• DC/DC converters

• Hot swap switch

• OR-ing FET